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APTGT200A60T3AG
Hase le
Phase leg Trench + Field Stop IGBT Power Module
29 30 31 32 13
VCES = 600V IC = 200A @ Tc = 100C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
4 3
Features
26 22 27 23 28 25 R1
*
8 7
16
18
19
20
14
28 27 26 25 29 30
23 22
20 19 18 16 15
* * * * * Benefits
Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance
31 32 2 3 4 7 8 10 11 12
14 13
* * * * *
Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together
Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 100C TC = 25C TC = 25C Tj = 150C Max ratings 600 290 200 400 20 750 400A @ 550V Unit V A V W
April, 2009 1-5 APTGT200A60T3AG - Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT200A60T3AG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 200A Tj = 150C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=200A Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A RG = 2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 200A RG = 2 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 200A Tj = 25C RG = 2 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Min Typ 12.3 0.8 0.4 2.2 115 45 225 55 130 50 300 70 1 1.8 5.7 7 1000 Max Unit nF C
ns
ns
mJ mJ A
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 200A VR = 300V IF = 200A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 250 500 200 1.6 1.5 125 220 9 20 2.2 4.8 2 Unit V A A V ns C mJ
April, 2009 2-5 APTGT200A60T3AG - Rev 1
di/dt =2800A/s
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APTGT200A60T3AG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.20 0.31 175 125 100 4.7 110 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-5
APTGT200A60T3AG - Rev 1
April, 2009
17
28
APTGT200A60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 400 350 300 IC (A)
TJ=150C TJ = 150C VGE=19V
400 350 300
IC (A)
TJ=25C TJ=125C
250 200 150 100 50 0 0 0.5 1
TJ=25C
250 200 150 100 50 0
VGE=13V VGE=15V
VGE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
400 350 300
Transfert Characteristics 14
TJ=25C
Energy losses vs Collector Current 12 10 E (mJ) 8 6 4
VCE = 300V VGE = 15V RG = 2 TJ = 150C Eoff
250 IC (A) 200 150 100 50 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 16
VCE = 300V VGE =15V IC = 200A TJ = 150C TJ=125C TJ=150C TJ=25C
Er
2 0 0 50
Eon
100 150 200 250 300 350 400 IC (A)
Reverse Bias Safe Operating Area 500 400 IF (A)
12 E (mJ)
Eoff Eon
300 200
8
4
Eon
Er
100 0
VGE=15V TJ=150C RG=2
0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14
0
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W)
IGBT
0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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4-5
APTGT200A60T3AG - Rev 1
April, 2009
APTGT200A60T3AG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 50 100 150 IC (A) 200 250
Hard switching ZCS ZVS VCE=300V D=50% RG=2 TJ=150C
Forward Characteristic of diode 400 350 300 250 IF (A) 200 150 100 50 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
TJ=125C TJ=150C
Tc=85C
TJ=25C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT200A60T3AG - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
April, 2009

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